Diodes ZXMP6A16K - Manual (Page 4)

ZXMP6A16K
Issue 3 - June 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
-60 V I
D
= -250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
-1.0 ␮A V
DS
= -60V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
-1.0 V I
D
= -250 ␮A, V
DS
=VGS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 ␮s. Duty cycle Յ2%.
R
DS(on)
0.085
⍀
V
GS
= -10V, I
D
= -2.9A
0.125 ⍀ V
GS
= -4.5V, I
D
= -2.4A
Forward transconductance
(*) (‡) g
fs
7.2 S V
DS
= -15V, I
D
= -2.9A
Dynamic
(‡)
Input capacitance C
iss
1021 pF V
DS
= -30V, V
GS
=0V
f=1MHz
Output capacitance C
oss
83 pF
Reverse transfer capacitance C
rss
56 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
3.5 ns V
DD
= -30V, I
D
= -1A
R
G
≅6.0⍀, V
GS
= -10V
Rise time t
r
4.1 ns
Turn-off delay time t
d(off)
35 ns
Fall time t
f
10 ns
Gate charge Q
g
12.1 nC V
DS
= -30V, V
GS
= -5V
I
D
= -2.9A
Total gate charge Q
g
24.2 nC V
DS
= -30V, V
GS
= -10V
I
D
= -2.9A
Gate-source charge Q
gs
2.5 nC
Gate drain charge Q
gd
3.7 nC
Source-drain diode
Diode forward voltage
(*) V
SD
-0.85 -0.95 V T
j
=25°C, I
S
= -3.4A,
V
GS
=0V
Reverse recovery time
(‡) t
rr
29.2 ns T
j
=25°C, I
S
= -2A,
di/dt=100A/
␮s
Reverse recovery charge
(‡) Q
rr
39.6 nC