Electrical characteristics, Zxmp6a16dn8, A product line of diodes incorporated – Diodes ZXMP6A16DN8 User Manual
Page 4
ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
4 of 8
July 2012
© Diodes Incorporated
ZXMP6A16DN8
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-60
⎯
⎯
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1.0 µA
V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0
⎯
⎯
V
I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 11)
R
DS (ON)
⎯
⎯
85
m
Ω
V
GS
= -10V, I
D
= -2.9A
⎯
125
V
GS
= -4.5V, I
D
= -2.4A
Forward Transconductance (Notes 11 & 12)
g
fs
⎯
7.2
⎯
S
V
DS
= -15V, I
D
= -2.9A
Diode Forward Voltage (Note 11)
V
SD
⎯
-0.85 -0.95 V I
S
= -3.4A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 12)
t
rr
⎯
29.2
⎯
ns
I
S
= -2A, di/dt = 100A/µs,
T
J
= +25°C
Reverse recovery charge (Note 12)
Q
rr
⎯
39.6
⎯
nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
⎯
1021
⎯
pF
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
⎯
83.1
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
56.4
⎯
pF
Total Gate Charge (Note 13)
Q
g
⎯
12.1
⎯
nC
V
GS
= -5V
V
DS
= -30V,
I
D
= -2.9A
Total Gate Charge (Note 13)
Q
g
⎯
24.2
⎯
nC
V
GS
= -10V
Gate-Source Charge (Note 13)
Q
gs
⎯
2.5
⎯
nC
Gate-Drain Charge (Note 13)
Q
gd
⎯
3.7
⎯
nC
Turn-On Delay Time (Note 13)
t
D(on)
⎯
3.5
⎯
ns
V
DD
= -30V, V
GS
= -10V,
I
D
= -1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 13)
t
r
⎯
4.1
⎯
ns
Turn-Off Delay Time (Note 13)
t
D(off)
⎯
35
⎯
ns
Turn-Off Fall Time (Note 13)
t
f
⎯
10
⎯
ns
Notes:
11. Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.