Diodes ZXMP6A16DN8 - Manual (Page 2)

ZXMP6A16DN8
Document number: DS33586 Rev. 4 - 2
2 of 8
www.diodes.com
July 2012
© Diodes Incorporated
ZXMP6A16DN8
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage V DSS
-60 V
Gate-Source voltage (Note 4) V
GS
±20 V
Continuous Drain current V
GS
= 10V
(Notes 6 & 8)
I
D
-3.9
A T
A
= +70°C (Notes 6 & 8) -3.1
(Notes 5 & 8) -2.9
Pulsed Drain current (Notes 7 & 8) I
DM
-18.3 A
Continuous Source current (Body diode) (Notes 6 & 8) I
S
-3.2 A
Pulsed Source current (Body diode) (Notes 7 & 8) I
SM
-18.3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Notes 5 & 8)
P
D
1.25
10.0
W
mW/°C
(Notes 5 & 9)
1.81
14.5
(Notes 6 & 8)
2.15
17
Thermal Resistance, Junction to Ambient
(Notes 5 & 8)
R θJA
100
°C/W
(Notes 5 & 9) 70
(Notes 6 & 8) 60
Thermal Resistance, Junction to Lead (Notes 8 & 10) R θJL
48.85
Operating and storage temperature range T J , T STG
-55 to 150 °C
Notes: 4. AEC-Q101 V
GS
maximum is ±16V.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t
≤ 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. For a dual device with one active die.
9. For a device with two active die running at equal power.
10. Thermal resistance from junction to solder-point.