Diodes ZXMP4A16G - Manual (Page 4)

ZXMP4A16G
S E M I C O N D U C T O R S
ISSUE 4 - JULY 2003
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-40 V I
D
=-250 µ A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-1 ␮A V
DS
=-40V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
= Ϯ20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-1.0 V I
D
=-250 ␮A, V
DS
= V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.060
0.100 ⍀
⍀
V
GS
=-10V, I
D
=-3.8A
V
GS
=-4.5V, I
D
=-2.9A
Forward Transconductance (1)(3) g
fs
8.85 S V
DS
=-15V,I
D
=-3.8A
DYNAMIC (3)
Input Capacitance C
iss
1007 pF
V
DS
=-20V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
130 pF
Reverse Transfer Capacitance C
rss
85 pF
SWITCHING (2)(3)
Turn-On Delay Time t
d(on)
2.33 ns
V
DD
=-20V, I
D
=-1A
R
G
(6.0⍀ , V
GS
=-10V
Rise Time t
r
8.84 ns
Turn-Off Delay Time t
d(off)
29.18 ns
Fall Time t
f
12.54 ns
Gate Charge Q
g
13.6 nC V
DS
=-20V,V
GS
=-5V,
I
D
=-3.8A
Total Gate Charge Q
g
26.1 nC
V
DS
=-20V,V
GS
=-10V,
I
D
=-3.8A
Gate-Source Charge Q
gs
2.8 nC
Gate-Drain Charge Q
gd
4.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
-0.85 -1.2 V T
J
=25 ЊC, I
S
=-3.4A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
27.2 ns T
J
=25 ЊC, I
F
=-3A,
di/dt= 100A/ ␮s
Reverse Recovery Charge (3) Q
rr
25.4 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
Յ300µs. Duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.