Diodes ZXM61P02F - Manual (Page 3)

ZXM61P02F
Document Number DS33478 Rev. 3 - 2
3 of 7
www.diodes.com
October 2013
© Diodes Incorporated
ZXM61P02F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-20   V I
D
= -250μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  -0.1 μA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
  ±100 nA V
GS
= 12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-0.7  -1.5 V I
D
= -250 A, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8) R
DS (ON)
 
0.6
Ω
V
GS
= -4.5V, I
D
= -0.61A
0.9 V
GS
= -2.7V, I
D
= -0.31A
Forward Transconductance (Notes 8 and 10) g
fs
0.56   S V
DS
= -10V, I
D
= -0.31A
Diode Forward Voltage (Note 8) V
SD
  -0.95 V T
J
= +25°C, I
S
= -0.61A, V
GS
= 0V
Reverse Recovery Time (Note 10) t
rr
 14.9  ns T
J
= +25°C, I
F
= -0.61A,
di/dt = 100A/μs Reverse Recovery Charge (Note 10) Q
rr
 5.6  nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
 150 
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 70 
Reverse Transfer Capacitance C
rss
 30 
Turn-On Delay Time (Note 9) t
d(on)
 2.9 
ns
V
DD
= -110V, I
D
= -0.93A,
R
G
 6.2Ω R
D
 11Ω
Turn-On Rise Time (Note 9) t
r
 6.7 
Turn-Off Delay Time (Note 9) t
d(off)
 11.2 
Turn-Off Fall Time (Note 9) t
f
 10.1 
Total Gate Charge (Note 9) Q
g
 3.5 
nC
V
DS
= -16V, V
GS
= -4.5V,
I
D
= -0.61A
Gate-Source Charge (Note 9) Q
gs
 0.5 
Gate-Drain Charge (Note 9) Q
gd
 1.5 
Notes: 8. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.