Zxmn20b28k, Electrical characteristics – Diodes ZXMN20B28K User Manual
Page 4
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
4 of 8
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN20B28K
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
200
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
500 nA
V
DS
= 200V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1 1.6 2.5 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
⎯
0.650
0.750
Ω
V
GS
= 10V, I
D
= 2.75A
0.670
0.780
V
GS
= 5V, I
D
= 2.75A
Forward Transconductance (Notes 8 & 9)
g
fs
⎯
6.13
⎯
S
V
DS
= 30V, I
D
= 2.75A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.860 0.950 V I
S
= 5.5A, V
GS
= 0V
Reverse recovery time (Note 9)
t
rr
⎯
177
⎯
ns
I
S
= 6.5A, V
GS
= 0V,
di/dt = 100A/
μs
Reverse recovery charge (Note 9)
Q
rr
⎯
1.4
⎯
μC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
358
⎯
pF
V
DS
= 25V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
50
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
6.1
⎯
pF
Total Gate Charge
Q
g
⎯
8.1
⎯
nC
V
DS
= 120V, V
GS
= 5V
I
D
= 6.5A
Gate-Source Charge
Q
gs
⎯
1.4
⎯
nC
Gate-Drain Charge
Q
gd
⎯
3.9
⎯
nC
Turn-On Delay Time (Note 10)
t
D(on)
⎯
17.8
⎯
ns
V
DD
= 100V, V
GS
= 5V
I
D
= 6.5A, R
G
≅ 25Ω
Turn-On Rise Time (Note 10)
t
r
⎯
76.9
⎯
ns
Turn-Off Delay Time (Note 10)
t
D(off)
⎯
44.7
⎯
ns
Turn-Off Fall Time (Note 10)
t
f
⎯
57.1
⎯
ns
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.