Diodes ZXMN20B28K - Manual (Page 2)

ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
2 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN20B28K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
200 V
Gate-Source voltage V GS
±20 V
Single Pulsed Avalanche Energy (Note 7) E
AS
73 mJ
Single Pulsed Avalanche Current (Note 7) I
AS
5.5 A
Repetitive Avalanche Energy (Note 4) E
AR
4.5 mJ
Repetitive Avalanche Current (Note 4) I
AR
5.5 A
Continuous Drain current V
GS
= 10V
(Note 3)
T
A
= 70 °C (Note 3)
(Note 2)
I
D
2.3
1.8
1.5
A
Pulsed Drain current V
GS
= 10V (Note 4) I
DM
17.3 A
Continuous Source current (Body diode) (Note 2) I
S
5.7 A
Pulsed Source current (Body diode) (Note 4) I SM
17.3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
4.3
34.4
W
mW/ °C
(Note 3)
10.2
76.0
(Note 6)
2.2
17.4
Thermal Resistance, Junction to Ambient
(Note 2)
R θJA
29.1
°C/W (Note 3) 12.3
(Note 6) 57.3
Thermal Resistance, Junction to Lead (Note 5) R θJL 1.15 °C/W
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t
≤ 10 sec.
4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. UIS in production with L = 4.83mH, I AS = 5.5A, R G = 25 Ω, V
DD
= 100V, starting T J = 25°C.