Electrical characteristics – Diodes ZXMN10B08E6 User Manual
Page 3
ZXMN10B08E6
Datasheet Number: DS33570 Rev. 2 – 2
3 of 7
May 2014
© Diodes Incorporated
ZXMN10B08E6
NEW PROD
UC
T
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100
⎯
⎯
V
I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
0.5 µA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
100 nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
3.0 V
I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS(ON)
⎯
⎯
0.23
Ω
V
GS
= 10V, I
D
= 1.6A
0.30
V
GS
= 4.5V, I
D
= 1.4A
0.50
V
GS
= 4.3V, I
D
= 1.1A
Forward Transconductance (Notes 8 & 10)
g
fs
⎯
4.8
⎯
S
V
DS
= 15V, I
D
= 1.6A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.85 0.95 V T
J
= +25°C, I
S
= 2.0A, V
GS
= 0V
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯
497
⎯
pF
V
DS
= 50V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
29
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
18
⎯
pF
Gate Charge (Note 9)
Q
g
⎯
5.0
⎯
nC
V
DS
= 50V , V
GS
= 5V, I
D
= 1.6A
Total Gate Charge (Note 9)
Q
g
⎯
9.2
⎯
nC
V
DS
= 50V, V
GS
= 10V,
I
D
= 1.6A
Gate-Source Charge (Note 9)
Q
gs
⎯
1.7
⎯
nC
Gate-Drain Charge (Note 9)
Q
gd
⎯
2.5
⎯
nC
Turn-On Delay Time (Note 9)
t
d(on)
⎯
2.9
⎯
ns
V
DD
= 50V, I
D
= 1.0A,
R
G
≅ 6.0Ω, V
GS
= 10V
Turn-On Rise Time (Note 9)
t
r
⎯
2.1
⎯
ns
Turn-Off Delay Time (Note 9)
t
d(off)
⎯
12.1
⎯
ns
Turn-Off Fall Time (Note 9)
t
f
⎯
5.0
⎯
ns
Reverse Recovery Time
t
rr
32
⎯
ns
T
J
= +25°C, I
F
= 1.7A,
di/dt = 100A/
μs
Reverse Recovery Charge
Q
rr
⎯
40
⎯
nC
Notes:
8. Measured under pulsed conditions. Width ≤ 300μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.