Electrical characteristics, Zxmn10a25k, A product line of diodes incorporated – Diodes ZXMN10A25K User Manual
Page 4
ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
4 of 8
July 2012
© Diodes Incorporated
ZXMN10A25K
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100
⎯
⎯
V
I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
0.5
μA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
2.0
⎯
4.0 V
I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 11)
R
DS (ON)
⎯
⎯
125
m
Ω
V
GS
= 10V, I
D
= 3.2A
150
V
GS
= 6V, I
D
= 2.6A
Forward Transconductance (Notes 11 & 12)
g
fs
⎯
7.3
⎯
S
V
DS
= 15V, I
D
= 2.9A
Diode Forward Voltage (Note 11)
V
SD
⎯
0.85 0.95 V
I
S
= 3.2A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 12)
t
rr
40.5
⎯
ns
I
S
= 2.9A, di/dt = 100A/µs
T
J
= +25°C
Reverse recovery charge (Note 12)
Q
rr
⎯
62
⎯
nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
⎯
859
⎯
pF
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
57.3
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
33
⎯
pF
Total Gate Charge (Note 13)
Q
g
⎯
9.6
⎯
nC
V
GS
= 5V
V
DS
= 50V
I
D
= 2.9A
Total Gate Charge (Note 13)
Q
g
⎯
17.16
⎯
nC
V
GS
= 10V
Gate-Source Charge (Note 13)
Q
gs
⎯
3.77
⎯
nC
Gate-Drain Charge (Note 13)
Q
gd
⎯
5.36
⎯
nC
Turn-On Delay Time (Note 13)
t
D(on)
⎯
4.9
⎯
ns
V
DD
= 50V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 13)
t
r
⎯
3.7
⎯
ns
Turn-Off Delay Time (Note 13)
t
D(off)
⎯
17.7
⎯
ns
Turn-Off Fall Time (Note 13)
t
f
⎯
9.4
⎯
ns
Notes:
11. Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.