Zxmn10a25k, Maximum ratings, Thermal characteristics – Diodes ZXMN10A25K User Manual
Page 2
ZXMN10A25K
Document number: DS33569 Rev. 3 - 2
2 of 8
July 2012
© Diodes Incorporated
ZXMN10A25K
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
100 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 7)
I
D
6.4
A
T
A
= +70
°C (Note 7)
5
(Note 6)
4.2
Pulsed Drain current
(Note 8)
I
DM
21 A
Continuous Source current (Body diode)
(Note 7)
I
S
10 A
Pulsed Source current (Body diode)
(Note 8)
I
SM
21 A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 6)
P
D
4.25
34
W
mW/
°C
(Note 7)
9.85
78.7
(Note 9)
2.11
16.8
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
29.4
°C/W
(Note 7)
12.7
(Note 9)
59.1
Thermal Resistance, Junction to Lead
(Note 10)
R
θJL
1.43
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. For a device surface mounted on FR4 PCB measured at t
≤ 10 sec.
8. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).