Diodes ZVN3310F - Manual (Page 2)

ZVN3310F
Document Number DS31980 Rev. 4 - 2
2 of 5
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZVN3310F
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
100 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current I D
100 mA
Pulsed Drain Current I
DM
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @T
A
= 25°C P
D
330 mW
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100 ⎯ ⎯ V I
D
= 1mA, V
GS
= 0V
Zero Gate Voltage Drain Current T
J
= 25 °C
T
J
= 125 °C (Note 4)
I
DSS
⎯ ⎯ 1
50
μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ 20 nA V
GS
=
±20V, V
DS
= 0V
Gate Threshold Voltage V
GS(th)
0.8
⎯
2.4 V V
DS
= V
GS
, I
D
= 1mA
ON CHARACTERISTICS (Note 3)
On-State Drain Current
I
D (ON)
500 ⎯ ⎯ mA V
DS
= 25V, V
GS
= 10V
Static Drain-Source On-Resistance R
DS (ON)
⎯ ⎯ 10 Ω V
GS
= 10V, I
D
= 500mA
DYNAMIC CHARACTERISTICS (Note 4)
Forward Transconductance (Note 3)
g
fs
100 ⎯ ⎯ mS V
DS
= 25V, I
D
= 500mA
Input Capacitance C
iss
⎯ ⎯ 40
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C oss
⎯ ⎯ 15
Reverse Transfer Capacitance C
rss
⎯ ⎯ 5
Turn-On Delay Time (Note 5) t
D(on)
⎯ 3 5
ns V
DD
≈ 25V, I
D
= 500mA
Turn-On Rise Time (Note 5) t r
⎯ 5 7
Turn-Off Delay Time (Note 5) t
D(off)
⎯ 4 6
Turn-Off Fall Time (Note 5) t
f
⎯ 5 7
Notes: 3. Measured under pulsed conditions. Width = 300 μs. Duty cycle ≤2%
4. Sample test.
5. Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator.