Electrical characteristics, Zxmn6a11g, A product line of diodes incorporated – Diodes ZXMN6A11G User Manual
Page 4
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
4 of 8
October 2010
© Diodes Incorporated
ZXMN6A11G
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1.0
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
3.0 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 6)
R
DS (ON)
⎯
0.105 0.120
Ω
V
GS
= 10V, I
D
= 2.5A
⎯
0.150 0.180
V
GS
= 4.5V, I
D
= 2A
Forward Transconductance (Notes 6 & 7)
g
fs
⎯
4.9
⎯
S
V
DS
= 15V, I
D
= 2.5A
Diode Forward Voltage (Note 6)
V
SD
⎯
0.85 0.95 V
I
S
= 2.8A, V
GS
= 0V, T
J
= 25°C
Reverse Recovery Time (Note 7)
t
rr
⎯
21.5
⎯
ns
I
S
= 2.8A, di/dt = 100A/
μs
T
J
= 25°C
Reverse Recovery Charge (Note 7)
Q
rr
⎯
20.5
⎯
nC
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯
330
⎯
pF
V
DS
= 40V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
⎯
35.2
⎯
Reverse Transfer Capacitance
C
rss
⎯
17.1
⎯
Gate Charge (Note 8)
Q
g
⎯
3.0
⎯
nC
V
GS
= 4.5V
V
DS
= 15V
I
D
= 2.5A
Total Gate Charge (Note 8)
Q
g
⎯
5.7
⎯
V
GS
= 10V
Gate-Source Charge (Note 8)
Q
gs
⎯
1.25
⎯
Gate-Drain Charge (Note 8)
Q
gd
⎯
0.86
⎯
Turn-On Delay Time (Note 8)
t
D(on)
⎯
1.95
⎯
ns
V
DD
= 30V, I
D
= 2.5A,
R
G
= 6
Ω, V
GS
= 10V
Turn-On Rise Time (Note 8)
t
r
⎯
3.5
⎯
Turn-Off Delay Time (Note 8)
t
D(off)
⎯
8.2
⎯
Turn-Off Fall Time (Note 8)
t
f
⎯
4.6
⎯
Notes:
6. Measured under pulsed conditions. Pulse width
≤ 300
μ
s; duty cycle
≤ 2%.
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperature.