Zxmn6a11g, Maximum ratings, Thermal characteristics – Diodes ZXMN6A11G User Manual
Page 2
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
2 of 8
October 2010
© Diodes Incorporated
ZXMN6A11G
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GS
±20
Continuous Drain Current
V
GS
= 10V
(Note 3)
T
A
= 70°C (Note 3)
(Note 2)
I
D
4.4
3.5
3.1
A
Pulsed Drain Current
V
GS
= 10V
(Note 4)
I
DM
15.6
Continuous Source Current (Body Diode)
(Note 3)
I
S
5
Pulsed Source Current (Body Diode)
(Note 4)
I
SM
15.6
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 2)
P
D
2.0
16
W
mW/°C
(Note 3)
3.9
31
Thermal Resistance, Junction to Ambient
(Note 2)
R
θJA
62.5
°C/W
(Note 3)
32.0
Thermal Resistance, Junction to Lead
(Note 5)
R
θJL
9.8
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes: 2.
For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300
μs.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).