Electrical characteristics, Zxmn6a09k, A product line of diodes incorporated – Diodes ZXMN6A09K User Manual
Page 4
ZXMN6A09K
Document Number DS33569 Rev. 6 - 2
4 of 8
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A09K
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
3.0 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
⎯
⎯
40
m
Ω
V
GS
= 10V, I
D
= 7.3A
60
V
GS
= 4.5V, I
D
= 5.6A
Forward Transconductance (Notes 8 & 9)
g
fs
⎯
15
⎯
S
V
DS
= 15V, I
D
= 7.3A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.85 0.95 V
I
S
= 6.6A, V
GS
= 0V, T
J
= 25°C
Reverse recovery time (Note 9)
t
rr
25.6
⎯
ns
I
S
= 3A, di/dt = 100A/
μs
T
J
= 25°C
Reverse recovery charge (Note 9)
Q
rr
⎯
26.0
⎯
nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯
1426
⎯
pF
V
DS
= 30V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
134
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
64
⎯
pF
Total Gate Charge (Note 10)
Q
g
⎯
15
⎯
nC
V
GS
= 4.5V, V
DS
= 30V, I
D
= 5.6A
Total Gate Charge (Note 10)
Q
g
⎯
29
⎯
nC
V
GS
= 10V, V
DS
= 30V
I
D
= 7.3A
Gate-Source Charge (Note 10)
Q
gs
⎯
7.0
⎯
nC
Gate-Drain Charge (Note 10)
Q
gd
⎯
4.7
⎯
nC
Turn-On Delay Time (Note 10)
t
D(on)
⎯
4.8
⎯
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 10)
t
r
⎯
4.6
⎯
ns
Turn-Off Delay Time (Note 10)
t
D(off)
⎯
32.5
⎯
ns
Turn-Off Fall Time (Note 10)
t
f
⎯
14.5
⎯
ns
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.