Zxmn6a09k, Maximum ratings, Thermal characteristics – Diodes ZXMN6A09K User Manual
Page 2
ZXMN6A09K
Document Number DS33569 Rev. 6 - 2
2 of 8
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A09K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
60 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 4)
I
D
11.8
A
T
A
= 70
°C (Note 4)
9.6
(Note 3)
7.7
Pulsed Drain current
(Note 5)
I
DM
43 A
Continuous Source current (Body diode)
(Note 4)
I
S
10.8 A
Pulsed Source current (Body diode)
(Note 5)
I
SM
43 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 3)
P
D
4.3
34.4
W
mW/
°C
(Note 4)
10.1
80.8
(Note 6)
2.15
17.2
Thermal Resistance, Junction to Ambient
(Note 3)
R
θJA
29
°C/W
(Note 4)
12.3
(Note 6)
58.1
Thermal Resistance, Junction to Lead
(Note 7)
R
θJL
1.04
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
3. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. For a device surface mounted on FR4 PCB measured at t
≤ 10 sec.
5. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).