Electrical characteristics, Zxmn6a07f, A product line of diodes incorporated – Diodes ZXMN6A07F User Manual
Page 4
ZXMN6A07F
Document Number DS33547 Rev. 7 - 2
4 of 8
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN6A07F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1
μA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100 nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
3.0 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 10)
R
DS (ON)
⎯
⎯
0.250
Ω
V
GS
= 10V, I
D
= -1.8A
0.350
V
GS
= 4.5V, I
D
= -1.3A
Forward Transconductance (Notes 10 and 12)
g
fs
⎯
2.3
⎯
S
V
DS
= 15V, I
D
= 1.8A
Diode Forward Voltage (Note 10)
V
SD
⎯
0.8 0.95 V
T
J
= +25°C, I
S
= 0.45A, V
GS
= 0V
Reverse Recovery Time (Note 12)
t
rr
⎯
20.5
⎯
ns
T
J
= +25°C, I
F
= 1.8A,
di/dt = 100A/
μs
Reverse Recovery Charge (Note 12)
Q
rr
⎯
21.3
⎯
nC
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
⎯
166
⎯
pF
V
DD
= 40V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
19.5
⎯
Reverse Transfer Capacitance
C
rss
⎯
8.7
⎯
Turn-On Delay Time (Note 11)
t
D(on)
⎯
1.8
⎯
ns
V
DD
= 30V, I
D
= 1.8A,
R
G
≅ 6.0Ω, V
GS
= 10V
Turn-On Rise Time (Note 11)
t
r
⎯
1.4
⎯
Turn-Off Delay Time (Note 11)
t
D(off)
⎯
4.9
⎯
Turn-Off Fall Time (Note 11)
t
f
⎯
2.0
⎯
Total Gate Charge (Note 11)
Q
g
⎯
1.65
⎯
nC
V
DS
= 30V, V
GS
= 5V,
I
D
= 1.8A
Total Gate Charge (Note 11)
Q
g
⎯
3.2
⎯
nC
V
DS
= 30V, V
GS
= 10V,
I
D
= 1.8A
Gate-Source Charge (Note 11)
Q
gs
⎯
0.67
⎯
Gate-Drain Charge (Note 11)
Q
gd
⎯
0.82
⎯
Notes:
10. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.