Zvn4306av, Typical characteristics, Saturation characteristics – Diodes ZVN4306AV User Manual
Page 3: Normalised r, And v, V temperature, On-resistance v drain current, Capacitance v drain-source voltage, Gate charge v gate-source voltage, Transconductance v drain current
TYPICAL CHARACTERISTICS
Saturation Characteristics
V
DS
- Drain Source
Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
I
D
- Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (°C)
Normalised R
DS(
o
n)
a
n
d V
GS(th)
-50 -25
0
25 50 75 100
150
125
175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
esi
sta
nc
e R
DS
(o
n)
Gate Threshold Voltage V
GS(TH)
I
D=
3A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
2.6
225
0
4
1
2
7
6
5
3
10
9
8
10V
8V
9V
7V
5V
4V
6V
3.5V
V
GS=
20V 12V
On-resistance v drain current
I
D-
Drain Current
(Amps)
R
DS
(on)
-Drain Source On Resistance
(
Ω
)
0.1
10
100
3.5V
5V
V
GS
=3V
6V
0.1
10
1.0
1
10V
3V
12
11
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
70
80
0
300
200
100
400
500
Q-Charge (nC)
V
G
S
-Gate Source V
oltage (V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DD
=
20V
I
D=
3A
40V
60V
1
2
3
4
5
6
7
8
9
10 11 12
Transconductance v drain current
I
D(on)
- Drain Current (Amps
)
g
fs
-T
ransconductance (S)
0
2
4
6
8
10
V
DS=
10V
0
1
2
4
3
5
12
14
16
18
20
8V
ZVN4306AV