Zvn4306av, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZVN4306AV User Manual
Page 2

ZVN4306AV
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BV
DSS
60
V
I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage
V
GS(th)
1.3
3
V
I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage
I
GSS
100
nA
V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage
Drain Current
I
DSS
10
100
µ
A
µ
A
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
On-State Drain
Current(1)
I
D(on)
12
A
V
DS
=10V, V
GS
=10V
Static Drain-Source
On-State Resistance
(1)
R
DS(on)
0.22
0.32
0.33
0.45
Ω
Ω
V
GS
=10V,I
D
=3A
V
GS
=5V, I
D
=1.5A
Forward
Transconductance
(1)(2)
g
fs
700
mS
V
DS
=25V,I
D
=3A
Input Capacitance (2)
C
iss
350
pF
Common Source
Output Capacitance (2)
C
oss
140
pF
V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
30
pF
Turn-On Delay Time
(2)(3)
t
d(on)
8
ns
V
DD
≈
25V, V
GEN
=10V, I
D
=3A
Rise Time (2)(3)
t
r
25
ns
Turn-Off Delay Time
(2)(3)
t
d(off)
30
ns
Fall Time (2)(3)
t
f
16
ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator