Diodes ZVN4306AV - Manual (Page 2)

ZVN4306AV
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source
Threshold Voltage V
GS(th)
1.3 3 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage
Drain Current I
DSS
10
100
µ
A
µ
A
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C (2)
On-State Drain
Current(1) I
D(on)
12 A V
DS
=10V, V
GS
=10V
Static Drain-Source
On-State Resistance
(1) R
DS(on)
0.22
0.32 0.33
0.45
Ω
Ω
V
GS
=10V,I
D
=3A
V
GS
=5V, I
D
=1.5A
Forward
Transconductance
(1)(2) g
fs
700 mS V
DS
=25V,I
D
=3A
Input Capacitance (2) C
iss
350 pF
Common Source
Output Capacitance (2) C
oss
140 pF V
DS
=25 V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2) C
rss
30 pF
Turn-On Delay Time
(2)(3) t
d(on)
8 ns
V
DD
≈
25V, V
GEN
=10V, I
D
=3A
Rise Time (2)(3) t
r
25 ns
Turn-Off Delay Time
(2)(3) t
d(off)
30 ns
Fall Time (2)(3) t
f
16 ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator