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Zvn4306av, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZVN4306AV User Manual

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ZVN4306AV

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

Drain-Source
Breakdown Voltage

BV

DSS

60

V

I

D

=1mA, V

GS

=0V

Gate-Source
Threshold Voltage

V

GS(th)

1.3

3

V

I

D

=1mA, V

DS

= V

GS

Gate-Body Leakage

I

GSS

100

nA

V

GS

=

±

20V, V

DS

=0V

Zero Gate Voltage
Drain Current

I

DSS

10
100

µ

A

µ

A

V

DS

=60V, V

GS

=0

V

DS

=48V, V

GS

=0V, T=125°C

(2)

On-State Drain
Current(1)

I

D(on)

12

A

V

DS

=10V, V

GS

=10V

Static Drain-Source
On-State Resistance
(1)

R

DS(on)

0.22
0.32

0.33
0.45

V

GS

=10V,I

D

=3A

V

GS

=5V, I

D

=1.5A

Forward
Transconductance
(1)(2)

g

fs

700

mS

V

DS

=25V,I

D

=3A

Input Capacitance (2)

C

iss

350

pF

Common Source
Output Capacitance (2)

C

oss

140

pF

V

DS

=25 V, V

GS

=0V, f=1MHz

Reverse Transfer
Capacitance (2)

C

rss

30

pF

Turn-On Delay Time
(2)(3)

t

d(on)

8

ns

V

DD

25V, V

GEN

=10V, I

D

=3A

Rise Time (2)(3)

t

r

25

ns

Turn-Off Delay Time
(2)(3)

t

d(off)

30

ns

Fall Time (2)(3)

t

f

16

ns

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

2%

(2) Sample test.
(3) Switching times measured with 50

source impedance and <5ns rise time on a pulse generator