Zvn4206gv, Typical characteristics, Capacitance v drain-source voltage – Diodes ZVN4206GV User Manual
Page 4: Gate charge v gate-source voltage, Transconductance v drain current, Transconductance v gate-source voltage
ZVN4206GV
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-C
apa
cit
ance (pF)
Q-Charge (nC)
V
G
S
-G
a
te Source V
ol
tage (V
olts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DS
=
20V
I
D=
1.5A
40V 60V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
70
80
0
120
80
40
160
200
T
j
- Junction Temperature (°C)
Maximum repetative avalanche energy
v Junction Temperature
Maximum repetative avalanche current
v Junction Temperature
T
j
- Junction Temperature (°C)
E
A
R
- Repe
tati
v
e
Av
al
ance
Ener
g
y (mJ)
I
A
R
- Repet
ativ
e A
v
al
ance Current (A)
Transconductance v drain current
I
D
- Drain Current (Amps
)
g
fs
-T
ranscon
ductanc
e (mS)
g
fs
-T
ranscon
ducta
nce (mS)
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
V
DS=
10V
0
300
200
100
400
800
700
600
500
900
1000
0
1
2
3
4
5
6
7
8
9
10
V
DS=
10V
0
300
200
100
400
800
700
600
500
900
1000
TYPICAL CHARACTERISTICS