Diodes ZVN4206GV - Manual (Page 2)

ZVN4206GV
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
60 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold
Voltage V
GS(th)
1.3 3 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA V
GS
=
±
20V, V
DS
=0V
Zero Gate Voltage Drain
Current I
DSS
10
100
µ
A
µ
A
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V, T=125°C (2)
On-State Drain Current (1) I
D(on)
3 A V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1) R
DS(on)
1
1.5
Ω
Ω
V
GS
=10V, I
D
=1.5A
V
GS
=5V, I
D
=0.5A
Forward Transconductance
(1)(2) g
fs
300 mS V
DS
=25V,I
D
=1.5A
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2) C
oss
60 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance
(2) C
rss
20 pF
Turn-On Delay Time (2)(3) t
d(on)
8 ns
V
DD
≈
25V, I
D
=1.5A, V
GEN
=10V
Rise Time (2)(3) t
r
12 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%
(2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator