Zxmn3f31dn8, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMN3F31DN8 User Manual
Page 4
ZXMN3F31DN8
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V
(BR)DSS
30
V
I
D
= 250
μA, V
GS
=0V
Zero Gate voltage drain
current
I
DSS
0.5
μA
V
DS
= 30V, V
GS
=0V
Gate-Body leakage
I
GSS
100
nA
V
GS
=±20V, V
DS
=0V
Gate-Source threshold
voltage
V
GS(th)
1.0
3.0
V
I
D
= 250
μA, V
DS
=V
GS
Static Drain-Source
on-state resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤2%.
R
DS(on)
0.024
0.039
Ω
Ω
V
GS
= 10V, I
D
= 7.0A
V
GS
= 4.5V, I
D
= 6.0A
Forward
transconductance
g
fs
16.5
S
V
DS
= 15V, I
D
= 7A
Dynamic
(†)
(†) For design aid only, not subject to production testing
Input capacitance
C
iss
608
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
132
pF
Reverse transfer
capacitance
C
rss
71
pF
Switching
(‡) Switching characteristics are independent of operating junction temperature.
Turn-on-delay time
t
d(on)
2.9
ns
V
DD
= 15V, I
D
= 1A
R
G
≅
6.0
Ω, V
GS
=10V
Rise time
t
r
3.3
ns
Turn-off delay time
t
d(off)
16
ns
Fall time
t
f
8
ns
Total gate charge
Q
g
12.9
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 7A
Gate-source charge
Q
gs
2.5
nC
Gate drain charge
Q
gd
2.52
nC
Source-drain diode
Diode Forward Voltage
V
SD
0.82
1.2
V
T
j
=25
°C, I
S
= 1.7A,
V
GS
=0V
Reverse recovery time
t
rr
12
ns
T
j
=25
o
C, I
S
=2.2A
di/dt=100A/
s
Reverse recovery charge
Q
rr
4.8
nC