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Diodes ZXMN3F31DN8 User Manual

Diodes Hardware

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Issue 2 - February 2008

1

www.zetex.com

© Zetex Semiconductors plc 2008

ZXMN3F31DN8
30V SO8 dual N-channel enhancement mode MOSFET

Summary

Description

This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.

Features

Low on-resistance

4.5V gate drive capability

Applications

DC-DC Converters

Power management functions

Load switching

Motor control

Back lighting

Ordering information

Device marking

ZXMN

3F31D

V

(BR)DSS

R

DS(on)

(

Ω)

I

D

(A)

30

0.024 @ V

GS

= 10V

7.3

0.039 @ V

GS

= 4.5V

5.7

DEVICE

Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMN3F31DN8TA

7

12

500

D2

S2

G2

D1

S1

G1

D1

S1

G1

S2

G2

D1

D2

D2