Diodes ZXMN3F31DN8 - Manual (Page 2)

ZXMN3F31DN8
Issue 2 - February 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300
μs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Parameter Symbol Limit Unit
Drain source voltage V
DSS
30 V
Gate source voltage V
GS
±20 V
Continous Drain Current @ V
GS
=10; T
A
=25
°C (b)
@ V
GS
=10; T
A
=70
°C (b)
@ V
GS
=10; T
A
=25
°C (a)
I
D
7.3
5.9
5.7
A
A
A
Pulsed drain current (c) I
DM
33 A
Continuous source current (body diode) (b) I
S
3.5 A
Pulsed source current (body diode) (c) I
SM
33 A
Power dissipation at T
A
=25
°C (a)(d)
Linear derating factor
P
D
1.25
10
W
mW/
°C
Power dissipation at T
A
=25
°C (a)(e)
Linear derating factor
P
D
1.8
14
W
mW/
°C
Power dissipation at T
A
=25
°C (b)(d)
Linear derating factor
P
D
2.1
17
W
mW/
°C
Operating and storage temperature range T
j
, T
stg
-55 to 150
°C
Parameter Symbol Limit Unit
Junction to ambient (a)(d) R ⍜JA 100
°C/W
Junction to ambient (a)(e) R ⍜JA 70
°C/W
Junction to ambient (b)(d) R ⍜JA 60
°C/W
Junction to lead (f) R ⍜JL 53
°C/W