Zxmn3b04n8 – Diodes ZXMN3B04N8 User Manual
Page 4

ZXMN3B04N8
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2004
4
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
(BR)DSS
30
V
I
D
=250
A, V
GS
=0V
Zero gate voltage drain current
I
DSS
0.5
A V
DS
=30V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=
Ϯ12V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
0.7
V
I
D
=250
A, V
DS
= V
GS
Static drain-source on-state
resistance
(1)
R
DS(on)
0.021
0.028
0.025
0.040
⍀
⍀
V
GS
=4.5V, I
D
=7.2A
V
GS
=2.5V, I
D
=5.7A
Forward transconductance
(1) (3)
g
fs
24
S
V
DS
=15V,I
D
=7.2A
DYNAMIC
(3)
Input capacitance
C
iss
2480
pF
V
DS
=15V, V
GS
=0V,
f=1MHz
Output capacitance
C
oss
318
pF
Reverse transfer capacitance
C
rss
184
pF
SWITCHING
(2) (3)
Turn-on delay time
t
d(on)
9
ns
V
DD
=15V, V
GS
=4.5V
I
D
=1A
R
G
≅6.0⍀,
Rise time
t
r
11.5
ns
Turn-off delay time
t
d(off)
40
ns
Fall time
t
f
16.6
ns
Total gate charge
Q
g
23.1
nC
V
DS
=15V,V
GS
=4.5V,
I
D
=7.2A
Gate-source charge
Q
gs
4.9
nC
Gate-drain charge
Q
gd
6.2
nC
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
V
SD
0.85
0.95
V
T
J
=25°C, I
S
=8A,
V
GS
=0V
Reverse recovery time
(3)
t
rr
17.9
ns
T
J
=25°C, I
F
=3.2A,
di/dt= 100A/
s
Reverse recovery charge
(3)
Q
rr
10
nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width
Յ 300s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.