Zxmn3b04n8 – Diodes ZXMN3B04N8 User Manual
Page 2
ZXMN3B04N8
S E M I C O N D U C T O R S
ISSUE 2 - MAY 2004
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient
(a)
R
⍜JA
62.5
°C/W
Junction to ambient
(b)
R
⍜JA
41.4
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t
Յ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300
s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V
DSS
30
V
Gate source voltage
V
GS
Ϯ12
V
Continuous drain current
@ V
GS
=4.5V; T
A
=25°C
(b)
@ V
GS
=4.5V; T
A
=70°C
(b)
@ V
GS
=4.5V; T
A
=25°C
(a)
I
D
8.9
7.3
7.2
A
A
A
Pulsed drain current
(c)
I
DM
45
A
Continuous source current (body diode)
(b)
I
S
4.5
A
Pulsed source current (body diode)
(c)
I
SM
45
A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
2
16
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
3
24
W
mW/°C
Operating and storage temperature range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS