Diodes ZXMN3B04N8 - Manual

1 S E M I C O N D U C T O R S
SUMMARY
V
(BR)DSS
=30V : R
DS
(
on
)=0.025 ; I
D
= 8.9A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
DC - DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
DEVICE MARKING
•
ZXMN
3B04
ZXMN3B04N8
ISSUE 2 - MAY 2004
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3B04N8TA 7” 12mm 500 units
ZXMN3B04N8TC 13” 12mm 2500 units
ORDERING INFORMATION
Top View
SO8