Electrical characteristics, Zxmn3a14f, A product line of diodes incorporated – Diodes ZXMN3A14F User Manual
Page 4
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
4 of 8
April 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN3A14F
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100 nA
V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
⎯
2.2 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
⎯
48 65
m
Ω
V
GS
= 10V, I
D
= 3.2A
69 95
V
GS
= 4.5V, I
D
= 2.6A
Forward Transconductance (Notes 8 and 10)
g
fs
⎯
7.1
⎯
S
V
DS
= 15V, I
D
= 3.2A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.85 0.95 V
T
J
= 25°C, I
S
= 2.5A, V
GS
= 0V
Reverse Recovery Time (Note 10)
t
rr
⎯
13
⎯
ns
T
J
= 25°C, I
F
= 1.6A,
di/dt = 100A/
μs
Reverse Recovery Charge (Note 10)
Q
rr
⎯
7
⎯
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯
448
⎯
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
82
⎯
Reverse Transfer Capacitance
C
rss
⎯
49
⎯
Turn-On Delay Time (Note 9)
t
D(on)
⎯
2.4
⎯
ns
V
DD
= 15V, I
D
= 1A,
R
G
≅ 6.0Ω, V
GS
= 10V
Turn-On Rise Time (Note 9)
t
r
⎯
2.5
⎯
Turn-Off Delay Time (Note 9)
t
D(off)
⎯
13.1
⎯
Turn-Off Fall Time (Note 9)
t
f
⎯
5.3
⎯
Total Gate Charge (Note 9)
Q
g
⎯
8.6
⎯
nC
V
DS
=15V, V
GS
= 10V,
I
D
= 3.2A
Gate-Source Charge (Note 9)
Q
gs
⎯
1.4
⎯
Gate-Drain Charge (Note 9)
Q
gd
⎯
1.8
⎯
Notes:
8. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.