Diodes ZXMN3A14F - Manual (Page 2)

ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
2 of 8
www.diodes.com
April 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN3A14F
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V GS
±20 V
Continuous Drain Current V
GS
= 10V
(Note 5)
T
A
= 70°C (Note 5)
(Note 4)
I
D
3.9
3.2
3.2
A
Pulsed Drain Current (Note 6) I
DM
18 A
Continuous Source Current (Body Diode) (Note 5) I
S
2.3 A
Pulsed Source Current (Body Diode) (Note 6) I
SM
18 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
Linear Derating Factor
P
D
1
8 W
mW/°C
Power Dissipation (Note 5)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Thermal Resistance, Junction to Ambient (Note 4) R θJA 125 °C/W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 83 °C/W
Thermal Resistance, Junction to Leads (Note 7) R θJL 70.44 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 μs - pulse current limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).