Zxmn3a01z – Diodes ZXMN3A01Z User Manual
Page 4
ZXMN3A01Z
Document number DS35722 Rev. 1 - 2
4 of 6
February 2012
© Diodes Incorporated
ZXMN3A01Z
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
0.1
1
10
0
1
2
3
4
5
6
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig. 6 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.01
0.1
1
10
0.01
0.1
1
10
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 7 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
ESI
S
T
ANCE (
)
DS
(O
N)
Ω
V
= 3.5V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 10V
GS
V
= 4.0V
GS
V
= 5.0V
GS
0.6
0.8
1.0
1.2
1.4
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
V
=
I = 250µA
GS
D
V
DS
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 On-Resistance Variation with Temperature
J
°
0.01
0
0.2
0.4
0.6
0.8
1.0
1.4
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
1.2
0.1
1
10
T = 150°C
A
T = 25°C
A
I
, S
O
UR
CE CURRE
NT
(
V
)
S
0
5
10
15
20
25
30
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
10
100
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
iss
C
oss
C
rss
f = 1MHz
0
1
2
3
4
5
6
Q
(nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
V
= 15V
I =
A
DS
D
2.5