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Electrical characteristics – Diodes ZXMN3A01Z User Manual

Page 3

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ZXMN3A01Z

Document number DS35722 Rev. 1 - 2

3 of 6

www.diodes.com

February 2012

© Diodes Incorporated

ZXMN3A01Z

ADVAN

CE I

N

F

O

RM

ATI

O

N

A Product Line of

Diodes Incorporated








Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage

BV

DSS

30 - - V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

- -

0.5

μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS
Gate Threshold Voltage

V

GS(th)

1 - - V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance (Note 7)

R

DS (ON)

-

0.106 120

V

GS

= 10V, I

D

= 2.5A

-

180

V

GS

= 4.5V, I

D

= 2A

Forward Transconductance (Note 7 & 9)

g

FS

- 3.5 - S

V

DS

= 4.5V, I

D

= 2.5A

Diodes Forward Voltage (Note 7)

V

SD

- 0.85

0.95 V

T

J

= 25

°C, I

S

= 1.7A, V

GS

= 0V

DYNAMIC CHARACTERISTICS
Input Capacitance (Note 8 & 9)

C

iss

- 186 - pF

V

DS

= 25V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance (Note 8 & 9)

C

oss

- 48 - pF

Reverse Transfer Capacitance (Note 8 & 9)

C

rss

- 29 - pF

Gate Charge (Note 8 & 9)

Q

g

- 2.6 - nC

V

GS

= 4.5V, V

DS

= 15V, I

D

= 2.5A

Total Gate Charge (Note 8 & 9)

Q

g

- 5.0 - nC

V

GS

= 10V, V

DS

= 15V,

I

D

= 2.5A

Gate-Source Charge (Note 8 & 9)

Q

gs

- 0.8 - nC

Gate-Drain Charge (Note 8 & 9)

Q

gd

- 1.2 - nC

Reverse Recovery Time (Note 9)

t

rr

17.7 ns

T

J

= 25

°C, I

S

= 2.5A,

di/dt = 100A/

μs

Reverse Recovery Charge (Note 9)

Q

rr

13.0 nC

Turn-On Delay Time (Note 8 & 9)

t

D(on)

- 2.6 - ns

V

GS

= 10V, V

DD

= 15V,

R

G

= 6

Ω , I

D

= 2.5A

Turn-On Rise Time (Note 8 & 9)

t

r

- 4.1 - ns

Turn-Off Delay Time (Note 8 & 9)

t

D(off)

- 13.5 - ns

Turn-Off Fall Time (Note 8 & 9)

t

f

- 3.6 - ns

Notes:

7. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤2%.

8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.




0

1

2

3

4

5

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 4 Typical Output Characteristic, T = 25°C

DS

A

0

1

2

3

4

5

6

7

8

9

10

I,

D

R

AI

N

C

U

R

R

EN

T

(A)

D

0

1

2

3

4

5

6

7

8

9

10

0

1

2

3

4

5

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 5 Typical Output Characteristic

DS

, T = 150°C

A

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D