Zxmn3a01f advanced information, Electrical characteristics, Zxmn3a01f – Diodes ZXMN3A01F User Manual
Page 3
ZXMN3A01F
Document number: DS33528 Rev. 3 - 2
3 of 7
February 2014
© Diodes Incorporated
ZXMN3A01F
ADVANCED INFORMATION
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V,
I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
0.5 µA
V
DS
= 30V,
V
GS
= 0V
Gate-Body Leakage
I
GSS
100 nA
V
GS
=
±
20V,
V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1
2.5 V
V
DS
= V
GS
,
I
D
= 250µA
Static Drain-Source On-Resistance (Note 8)
R
DS(ON)
0.11 0.12
V
GS
= 10V,
I
D
= 2.5A
0.18
V
GS
= 4.5V,
I
D
= 2A
Forward Transconductance
g
FS
3.5
S
V
DS
= 4.5V,
I
D
= 2.5A
Diode Forward Voltage (Note 8 & 10)
V
SD
0.85
0.95
V
V
GS
= 0V, I
S
= 1.7A, T
J
= +25°C
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
190
pF
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
C
oss
38
Reverse Transfer Capacitance
C
rss
20
Gate Charge (Note 9)
Q
g
2.3
nC
V
DS
= 15V, V
GS
= 5V, I
D
= 2.5A
Total Gate Charge (Note 9)
Q
g
3.9
V
DS
= 15V, V
GS
= 10V,
I
D
= 2.5A
Gate-Source Charge (Note 9)
Q
gs
0.6
Gate-Drain Charge (Note 9)
Q
gd
0.9
Turn-On Delay Time (Note 9)
t
D(on)
1.7
ns
V
DD
= 15V , I
D
= 2.5A,
R
G
= 6Ω, V
GS
= 10V
Turn-On Rise Time (Note 9)
t
r
2.3
Turn-Off Delay Time (Note 9)
t
D(off)
6.6
Turn-Off Fall Time (Note 9)
t
f
2.9
Reverse Recovery Time
t
rr
17.7
ns
T
J
= +25°C, I
F
= 2.5A,
di/dt= 100A/
µ
s
Reverse Recovery Charge
Qrr
13
nC
Notes:
8. Measured under pulsed conditions. Width=300μs. Duty cycle
≦
2%.
9. Switching characteristics are independent of operating junction temperature.
10. Guaranteed by design. Not subject to production testing.