Diodes ZXMN3A01F - Manual (Page 2)

ZXMN3A01F
Document number: DS33528 Rev. 3 - 2
2 of 7
www.diodes.com
February 2014
© Diodes Incorporated
ZXMN3A01F
ADVANCED INFORMATION
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
± 20 V
Continuous Drain Current, V
GS
= 10V
(Note 6)
(Note 6)
(Note 5) T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
I
D
2.0
1.6
1.8
A
Pulsed Drain Current (Note 7) I
DM
8 A
Maximum Body Diode Continuous Current (Note 6) I
S
1.3 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation
Linear Derating Factor
(Note 5) P
D
625 mW
5 mW/°C
Total Power Dissipation
Linear Derating Factor
(Note 6) P
D
806 mW
6.4 mW/°C
Thermal Resistance, Junction to Ambient
(Note 5)
R
θJA
200
°C/W
(Note 6) 155
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t
≦ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10μs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.