Diodes ZXMN2088DE6 - Manual (Page 4)

ZXMN2088DE6
Electrical characteristics (at T
amb
= 25°C unless otherwise stated).
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown
voltage V
(BR)DSS
20 V I
D
= 250 μA, V
GS
=0V
Zero gate voltage drain current I
DSS
100 nA V
DS
= 3V, V
GS
=0V
Zero gate voltage drain current I
DSS
1 μA V
DS
= 20V, V
GS
=0V
Gate-Body leakage I
GSS
100 nA V
GS
= ±8V, V
DS
=0V
Gate-Source threshold voltage V
GS(th)
0.4 1.0 V I
D
= 250 μA, V
DS
=V
GS
Static Drain-Source on-state
resistance
( * )
R
DS(on)
112
137
165
0.200
0.240
0.310
Ω
Ω
Ω V
GS
= 4.5V, I
D
= 1.0A
V
GS
= 2.5V, I
D
= 0.6A
V
GS
= 1.8V, I
D
= 0.3A
Forward transconductance ( * ) (‡) g
fs
4.6 S V
DS
= 10V, I
D
= 1.0A
Dynamic
(‡)
Input capacitance C
iss
279 pF
Output capacitance C
oss
52 pF
Reverse transfer capacitance C
rss
29 pF
V
DS
= 10V, V
GS
=0V
f=1MHz
Switching
(†) (‡)
Turn-on-delay time t
d(on)
2 ns
Rise time t
r
3.2 ns
Turn-off delay time t
d(off)
12.7 ns
Fall time t
f
6.2 ns
V
DD
= 10V,V
GS
=4.5V
I
D
= 1A
R
G
≈ 6.0 Ω
Gate Charge
Total Gate charge Q
g
3.8 nC
Gate-Source charge Q
gs
0.41 nC
Gate Drain charge Q
gd
0.56 nC
V
DS
= 10V,
V
GS
= 4.5V
I
D
= 2.4A
Source-drain diode
Diode forward voltage (‡) V
SD
0.75 0.95 V T
j
=25 °C, I
S
= 1.0A,
V
GS
=0V
Reverse recovery time t
rr
6.6 ns
Reverse recovery charge Q
rr
1.6 nC
T
j
= 25°C,
I
F
= 1.24A
di/dt = 100A/µs
NOTES:
( * )
Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
(†)
Switching characteristics are independent of operating junction temperature.
(‡)
For design aid only, not subject to production testing.
Issue 2 – June 2008 4 www.zetex.com
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