Diodes ZXMN2088DE6 - Manual

Part no.
Issue 2 - June 2008 1 www.zetex.com
© Diodes Incorporated 2008 www.diodes.com
ZXMN2088DE6
20V Dual SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
Description
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance
achievable with low gate drive.
Features
• Low on-resistance
• Low gate drive capability
• SOT23-6 (dual) package
Applications
• Power Management functions
• Disconnect switches
• Relay driving and load switching
Ordering information
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN2088DE6TA 7 8 3,000
Device marking
2088
V
(BR)DSS
R
DS (on)
(
Ω)
I
D
(A)
0.200 @ V
GS
= 4.5V 2.1
0.240 @ V
GS
= 2.5V 1.9
20
0.310 @ V
GS
= 1.8V 1.7
Pinout – top view
G1
S2
G2 D1
S1
D2