Diodes ZXMN2088DE6 - Manual (Page 2)

ZXMN2088DE6
Ab solute maximum ratings
Parameter Symbol Limit Unit
Drain-Source voltage V
DSS
20 V
Gate-Source voltage V
GS
± 8 V
Continuous Drain current @ V
GS
= 4.5V; T
A
=25 °C (b) (d)
@ V
GS
= 4.5V; T
A
=70 °C (b) (d)
@ V
GS
= 4.5V; T
A
=25 °C (a) (d)
I
D
2.1
1.7
1.7
A
Pulsed Drain current (c) I
DM
8 A
Power dissipation at T
A
=25 °C (a) (d)
Linear derating factor
P
D
0.9
7.2
W
mW/ °C
Power dissipation at T
A
=25 °C (a) (e)
Linear derating factor
P
D
1.1
8.8
W
mW/ °C
Power dissipation at T
A
=25 °C (b) (d)
Linear derating factor
P
D
1.3
10.4
W
mW/ °C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Value Unit
Junction to Ambient (a) (d) R
θJA
139 °C/W
Junction to Ambient (a) (e) R
θJA
113 °C/W
Junction to Ambient (b) (d) R
θJA
96 °C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) As above measured at t ≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum
junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
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