Diodes ZHB6792 - Manual (Page 4)

ZHB6792
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
-75 V I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage V
(BR)CEO
-70 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage V
(BR)EBO
-5 V I
E
=-100
µ
A
Collector Cut-Off Current I
CBO
-0.1
µ
A V
CB
=-40V
Emitter Cut-Off Current I
EBO
-0.1
µ
A V
EB
=-4V
Collector-Emitter
Saturation Voltage V
CE(sat)
-0.45
-0.5 V
V I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-25mA*
Base-Emitter
Saturation Voltage V
BE(sat)
-0.95 V I
C
=-1A, I
B
=-25mA*
Base-Emitter
Turn-On Voltage V
BE(on)
-0.75 V I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer h
FE
300
250
200 800 I
C
=-10mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
Transition Frequency f
T
100 MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance C
ibo
225 pF V
EB
=-0.5V, f=1MHz
Output Capacitance C
obo
22 pF V
CB
=-10V, f=1MHz
Switching Times t
on
t
off
35
750 ns
ns I
C
=-500mA,
I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%