Diodes ZHB6792 - Manual (Page 3)

ZHB6792
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS.
BreakdownVoltages V
(BR)CBO
70 V I
C
=100
µ
A
V
(BR)CEO
70 V I
C
=10mA*
V
(BR)EBO
5 V I
E
=100
µ
A
Cut-Off Currents I
CBO
0.1
µ
A V
CB
=55V
I
EBO
0.1
µ
A V
EB
=4V
Saturation Voltages V
CE(sat)
0.15
0.5 V
V I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=10mA*
V
BE(sat)
0.9 V I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage V
BE(on)
0.9 V I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio h
FE
500
400
150 I
C
=100mA,V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A,V
CE
=2V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=5V, f=50MHz
Input Capacitance C
ibo
200 pF V
EB
=0.5V, f=1MHz
Output Capacitance C
obo
12 pF V
CB
=10V, f=1MHz
Switching Times t
on
t
off
46
1440 ns
ns I
C
=500mA, I
B1
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%