Diodes ZHB6790 - Manual (Page 4)

NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
50 V I
C
=100 µ A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
40 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5 V I
E
=100 µ A
Collector Cutoff Current I
CBO
0.1 µ A V
CB
=35V
Emitter Cutoff Current I
EBO
0.1 µ A V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.1
0.16
0.5
0.35
V
V
V
V
I
C
=100mA, I
B
=0.5mA*
I
C
=500mA, I
B
=2.5mA*
I
C
=1A, I
B
=5mA*
I
C
=2A, I
B
=30mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 V I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.73 V I
C
=1A, V
CE
=2V*
Static Forward Current
Transfer Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Transition Frequency f
T
150 MHz I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance C
ibo
200 pF V
EB
=0.5V, f=1MHz
Output Capacitance C
obo
16 pF V
CB
=10V, f=1MHz
Switching Times t
on
t
off
33
1300
ns I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%.
ZHB6790