Diodes ZHB6790 - Manual (Page 3)

PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
-50 V I
C
=-100 µ A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-40 V I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5 V I
E
=-100 µ A
Collector Cutoff Current I
CBO
-0.1 µ A V
CB
=-30V
Emitter Cutoff Current I
EBO
-0.1 µ A V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.14
-0.25
-0.45
-0.75
V
V
V
V
I
C
=-100mA, I
B
=-0.5mA*
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.0 V I
C
=-1A, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-0.75 V I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
200
150
I
C
=-100mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency f
T
100 MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance C
ibo
225 pF V
EB
=-0.5V, f=1MHz
Output Capacitance C
obo
24 pF V
CB
=-10V, f=1MHz
Switching Times t
on
t
off
35
600
ns I
C
=-500mA,
I
B1
= -50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%.
ZHB6790