Diodes ZXTP558L - Manual (Page 3)

ZXTP558L
Document number: DS32186 Rev. 2 - 2
3 of 6
www.diodes.com
October 2012
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A Product Line of
Diodes Incorporated
ZXTP558L
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-400 ⎯ ⎯ V I
C
= -100 μA
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
-400 ⎯ ⎯ V I
C
= -1mA
Emitter-Base Breakdown Voltage BV
EBO
-7 ⎯ ⎯ V I
E
= -100 μA
Collector Cutoff Current I
CBO
⎯ ⎯ -100 nA V
CB
= -320V
Emitter Cutoff Current I CES
⎯ ⎯ -100 nA V CE = -320V
Base Cutoff Current I
EBO
⎯ ⎯ -100 nA V
BE
= -5V
DC Current Gain (Note 8) h
FE
100
100
⎯
⎯ ⎯
300
⎯
⎯ I
C
= -1mA, V
CE
= -10V
I
C
= -50mA
Collector-Emitter Saturation Voltage (Note 8) V
CE(sat)
⎯
⎯ ⎯
⎯ -0.2
-0.5
V
I
C
= -20mA, I
B
= -2mA
I
C
= -50mA, I
B
= -6mA
Base-Emitter Turn-On Voltage V
BE(on)
⎯ ⎯ -0.9 V V
CE
= -10V, I
C
= -50mA
Base-Emitter Saturation Voltage V
BE(sat)
⎯ ⎯ -0.9 V I
C
= -50mA, I
B
= -5mA
Output Capacitance (Note 8) C
obo
⎯ ⎯ 5 pF V
CB
= -20V, f = 1.0MHz
Current Gain-Bandwidth Product f
T
50 ⎯ ⎯ MHz
V
CE
= -20V, I
C
= -10mA,
f = 20MHz
Turn-On Time t on
⎯ 95 ⎯ ns V
CE
= -100V, I
C
= -50mA
I
B1
= 5mA, I
B2
= -10mA Turn-Off Time t
off
⎯ 1600 ⎯ ns
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300μs; Duty cycle ≤ 2%.