Diodes ZX5T955Z - Manual (Page 4)

ZX5T955Z.
Issue 2 - June 2008 4 www.zetex.com
© Zetex Semiconductors Ltd 2008
Electrical Characteristics (at T
amb
=25 o C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-Base breakdown
voltage BV
CBO
-180 -200 V I
C
= -100 ␮A
Collector-Emitter breakdown
voltage BV
CER
-180 -200 V I
C
= -100 ␮A, RB<1k⍀
Collector-Emitter breakdown
voltage BV
CEO
-140 -160 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.
Emitter-Base breakdown
voltage BV
EBO
-7.0 -8.0 V I
E
= -100
␮A
Collector cut-off current I
CBO
<1 -20
-0.5
nA
␮A V
CB
= -150V
V
CB
= -150V, Tamb =100 o C
Collector cut-off current I
CER
R<1k
⍀
<1 -20
-0.5
nA
␮A V
CB
= -150V
V
CB
= -150V, Tamb =100 o C
Emitter cut-off current I
EBO
<1 -10 nA V
EB
= -6V
Collector-Emitter saturation
voltage V
CE(sat)
-37 -60 mV I
C
= -0.1A, I
B
= -5mA (*)
-50 -75 mV I
C
= -0.5A, I
B
= -50mA (*)
-80 -115 mV I
C
= -1A, I
B
= -100mA (*)
-255 -330 mV I
C
= -3A, I
B
= -300mA (*)
Base-emitter saturation
voltage V
BE(sat)
-910 -1010 mV I
C
= -3A, I
B
= -300mA (*)
Base-emitter turn-on voltage V
BE(on)
-800 -900 mV I
C
= -3A, V
CE
= -5V (*)
Static forward current
transfer ratio h
FE
100 225 I
C
= -10mA, V
CE
= -5V (*)
100 200 300 I
C
= -1A, V
CE
= -5V (*)
45 100 I
C
= -3A, V
CE
= -5V (*)
5 I
C
= -10A, V
CE
= -5V (*)
Transition frequency f
T
120 MHz I
C
= -100mA, V
CE
= -10V
f = 50MHz
Output capacitance C
OBO
33 pF V
CB
= -10V, f = 1MHz (*)
Switching times t
on
42 ns I
C
= -1A, V
CC
= -50V,
t
off
636 ns I
B1
= -I
B2
= -100mA