Electrical characteristics, Ztx796a, A product line of diodes incorporated – Diodes ZTX796A User Manual
Page 4
ZTX796A
Document Number DS31908 Rev. 3 - 2
4 of 7
May 2013
© Diodes Incorporated
ZTX796A
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-200 — —
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 7)
BV
CEO
-200
— — V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5 — — V
I
E
= -100µA
Collector-Emitter Cutoff Current
I
CES
— — -0.1 µA
V
CE
= -150V
Collector-Base Cutoff Current
I
CBO
— — -0.1 µA
V
CB
= -150V
Emitter-Base Cutoff Current
I
EBO
— — -0.1 µA
V
EB
= -4V
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
—
—
—
—
—
—
-0.2
-0.3
-0.3
mV
mV
mV
I
C
= -50mA, I
B
= -2mA
I
C
= -100mA, I
B
= -5mA
I
C
= -200mA, I
B
= -20mA
Base-Emitter Saturation Voltage (Note 7)
V
BE(sat)
— —
-0.95
mV
I
C
= -200mA, I
B
= -20mA
Base-Emitter Turn-On Voltage (Note 7)
V
BE(on)
—
-0.67 — mV
I
C
= -200mA, V
CE
= -10V
Static Forward Current Transfer Ratio (Note 7)
h
FE
300
300
250
100
—
—
—
—
800
—
—
—
—
—
—
—
I
C
= -10mA, V
CE
= -10V
I
C
= -100mA, V
CE
= -10V
I
C
= -300mA, V
CE
= -10V
I
C
= -400mA, V
CE
= -10V
Transition Frequency
f
T
100
— — MHz
V
CE
= -5V, I
C
= -50mA
f = 50MHz
Input Capacitance
C
ibo
—
225
—
pF
V
EB
= -0.5V, f = 1MHz
Output Capacitance
C
obo
— 12 — pF
V
CB
= -10V, f = 1MHz
Switching Times
t
on
—
100
—
ns
V
CC
= -50V, I
C
= -100mA
I
B1
= -I
B2
= -10mA
t
off
—
3200
—
ns
Note:
7. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%