Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN19055DZ User Manual
Page 4
ZXTN19055DZ
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
BV
CBO
150
200
V
I
C
= 100mA
Collector-emitter breakdown
voltage (forward blocking)
BV
CEX
150
200
V
I
C
= 100mA, R
BE
< 1k
⍀ or
-1V < V
BE
< +0.25V
Collector-emitter breakdown
voltage (base open)
BV
CEO
55
75
V
I
C
= 10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
Emitter-base breakdown
voltage
BV
EBO
7
8.1
V
IE = 100mA
Collector-base cut-off current
I
CBO
<1
50
nA
V
CB
= 120V
20
A V
CB
= 120V, T
amb
= 100°C
Collector-emitter cut-off
current
I
CEX
<1
100
nA V
CE
= 120V; R
BE
< 1k
⍀ or
-1V < V
BE
< 0.25V
Emitter cut-off current
I
EBO
<1
50
nA
V
EB
= 5.6V
Collector-emitter saturation
voltage
V
CE(sat)
25
40
mV
I
C
= 0.5A, I
B
= 50mA
45
70
mV
I
C
= 1A, I
B
= 50mA
40
60
mV
I
C
= 1A, I
B
= 100mA
200
350
mV
I
C
= 2A, I
B
= 20mA
110
140
mV
I
C
= 2A, I
B
= 40mA
140
200
mV
I
C
= 4A, I
B
= 200mA
170
250
mV
I
C
= 6A, I
B
= 600mA
Base-emitter saturation
voltage
V
BE(sat)
800
900
mV
I
C
= 2A, I
B
= 20mA
1000
1150
mV
I
C
= 6A, I
B
= 600mA
Base-emitter turn-on voltage
V
BE(on)
760
900
mV
I
C
= 2A, V
CE
= 2V
900
1050
mV
I
C
= 6A, V
CE
= 2V
Static forward current transfer
ratio
h
FE
250
400
700
I
C
= 10mA, V
CE
= 2V
250
400
I
C
= 1A, V
CE
= 2V
180
300
I
C
= 2A, V
CE
= 2V
30
50
I
C
= 6A, V
CE
= 2V
20
I
C
= 10A, V
CE
= 2V
Transition frequency
f
T
140
200
MHz
I
C
= 100mA, V
CE
=10 V
f
= 50MHz
Output capacitance
C
OBO
21.2
30
pF
V
CB
= 10V, f
= 1MHz
Delay time
t
d
13.8
V
CC
= 10V,
I
C
= 1A,
I
B1
= I
B2
= 100mA
Rise time
t
r
21.9
Storage time
t
s
546
Fall time
t
f
106