Diodes ZXTN19055DZ - Manual (Page 2)

ZXTN19055DZ
Issue 1 - June 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter Symbol Limit Unit
Collector-base voltage V
CBO
150 V
Collector-emitter voltage (forward blocking voltage) V
CEX
150 V
Collector-emitter voltage (base open) V
CEO
55 V
Emitter-base voltage V
EBO
7 V
Continuous collector current
(b) I
C
6 A
Peak pulse current I
CM
10 A
Power dissipation at T
amb
=25°C
(a) P
D
1.5 W
Linear derating factor 12 mW/°C
Power dissipation at T
amb
=25°C
(b) P
D
2.1 W
Linear derating factor 16.8 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a) R ⍜JA 83 °C/W
Junction to ambient
(b) R ⍜JA 59 °C/W