Zxtn2031f, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXTN2031F User Manual
Page 4
ZXTN2031F
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V
(BR)CBO
80
175
V
I
C
=100
µA
Collector-emitter breakdown
voltage
V
(BR)CEV
80
175
V
I
C
=1
µA, -1V< V
BE
<+0.3V
Collector-emitter breakdown
voltage
V
(BR)CEO
50
75
V
I
C
=10mA
(a)
NOTES:
(a) Measured under pulsed conditions. Pulse width=300
S. Duty cycle Յ2%.
Emitter-base breakdown
voltage
V
(BR)EBO
7.0
8.3
V
I
E
=100
µA
Collector-emitter cut-off
current
I
CEV
<1
20
nA
V
CE
=60V, V
BE
= -1V
Collector-base cut-off current I
CBO
<1
20
nA
V
CB
=60V
Emitter-base cut-off current
I
EBO
<1
10
nA
V
EB
=6V
Static forward current
transfer ratio
H
FE
190
200
200
80
300
350
340
125
560
I
C
=10mA, V
CE
=2V
(a)
I
C
=500mA, V
CE
=2V
(a)
I
C
=2A, V
CE
=2V
(a)
I
C
=5A, V
CE
=2V
(a)
Collector-emitter saturation
voltage
V
CE(sat)
13
30
80
135
18
40
110
170
mV
mV
mV
mV
I
C
=0.1A, I
B
=5mA
(a)
I
C
=1A, I
B
=100mA
(a)
I
C
=2A, I
B
=40mA
(a)
I
C
=5A, I
B
=250mA
(a)
Base-emitter saturation
voltage
V
BE(sat)
0.80
0.92
0.90
1.00
V
V
I
C
=2A, I
B
=40mA
(a)
I
C
=5A, I
B
=250mA
(a)
Base-emitter turn-on voltage
V
BE(on)
0.83
0.93
V
I
C
=5A, V
CE
=2V
(a)
Transition frequency
f
T
125
MHz
Ic=500mA, V
CE
=10V,
f=50MHz
Output capacitance
C
obo
29
pF
V
CB
=10V, f=1MHz
Delay time
t
(d)
16
ns
Rise time
t
(r)
27
ns
V
CC
=12V, I
C
=2.5A,
Storage time
t
(stg)
468
ns
I
B1
=I
B2
=125mA
Fall time
t
(f)
44
ns