Diodes ZXTN2031F - Manual

Issue 2 - January 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXTN2031F
50V, SOT23, NPN medium power transistor
Summary
V
(BR)CEV
> 80V, V
(BR)CEO
> 50V
I
C(cont)
= 5A
R
CE(sat)
= 24m
⍀ typical
V
CE(sat)
< 40mV @ 1A
P
D
= 1.2W
Complementary part number: ZXTP2025F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Feature
• Higher power dissipation SOT23 Package
• High peak current
• Low saturation voltage
• High gain
• 80V forward blocking voltage
Applications
• MOSFET and IGBT gate driving
• Motor drive
• Relay, lamp and solenoid drive
• DC-DC converters
Ordering information
Device marking
322
Device Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXTN2031FTA 7 8 3,000
Pinout - top view