Diodes ZXTC4591AMC - Manual (Page 6)

ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
6 of 9
www.diodes.com
October 2012
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A Product Line of
Diodes Incorporated
ZXTC4591AMC
PNP - Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-40 - - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 12) BV
CEO
-40 - - V I
C
= -10mA
Emitter-Base Breakdown Voltage BV EBO
-7 - - V I E = -100µA
Collector Cutoff Current I
CBO
- - -100 nA V
CB
= -30V
Emitter Cutoff Current I
EBO
- - -100 nA V
EB
= -4V
Collector Emitter Cutoff Current I
CES
- - -100 nA V
CE
= -30V
Static Forward Current Transfer Ratio (Note 12) h
FE
300
300
250
160
30
-
-
-
-
- -
800
-
-
- -
I
C
= -1mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 12) V
CE(sat)
-
-
- -
-
- -200
-350
-500
mV
I C = -0.1A, I B = -1mA
I
C
= -0.5A, I
B
= -20mA
I
C
= -1.0A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 12) V
BE(on)
- - -1.0 V I
C
= -1A, V
CE
= -5V
Base-Emitter Saturation Voltage (Note 12) V BE(sat)
- - -1.1 V I C = -1A, I B = -50mA
Output Capacitance C
obo
- - 10 pF V
CB
= -10V, f = 1MHz
Transition Frequency f
T
150 - - MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.