Zxtc4591amc, Npn - electrical characteristics, A product line of diodes incorporated – Diodes ZXTC4591AMC User Manual
Page 4
ZXTC4591AMC
Document number: DS31925 Rev. 4 - 2
4 of 9
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC4591AMC
NPN - Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
40 - - V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 12)
BV
CEO
40 - - V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 - - V
I
E
= 100µA
Collector Cutoff Current
I
CBO
- -
100
nA
V
CB
= 30V
Emitter Cutoff Current
I
EBO
- -
100
nA
V
EB
= 4V
Collector Emitter Cutoff Current
I
CES
- -
100
nA
V
CE
= 30V
Static Forward Current Transfer Ratio (Note 12)
h
FE
300
300
200
35
-
-
-
-
-
900
-
-
-
I
C
= 1mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
I
C
= 2A, V
CE
= 5V
Collector-Emitter Saturation Voltage (Note 12)
V
CE(sat)
-
-
-
-
300
500
mV
I
C
= 0.5A, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 12)
V
BE(on)
- -
1.0 V
I
C
= 1A, V
CE
= 5V
Base-Emitter Saturation Voltage (Note 12)
V
BE(sat)
- -
1.1 V
I
C
= 1A, I
B
= 100mA
Output Capacitance
C
obo
- - 10 pF
V
CB
= 10V, f = 1MHz
Transition Frequency
f
T
150 - - MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Notes:
12. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%.