Diodes ZXT849K - Manual (Page 4)

ZXT849K
S E M I C O N D U C T O R S
ISSUE 2 - DECEMBER 2003
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
Collector-base breakdown voltage BV
CBO
80 125 V I
C
=100 ␮A
Collector-emitter breakdown voltage BV
CER
80 125 V I
C
=1 ␮A, R
BE
= Յ1k⍀
Collector-emitter breakdown voltage BV
CEO
30 40 V I
C
=10mA*
Emitter-base breakdown voltage BV
EBO
7 8 V I
E
=100 ␮A
Collector cut-off current I
CBO
20 nA V
CB
=70V
Collector cut-off current I
CER
20 nA V
CB
=70V, R
BE
= Յ1k⍀
Emitter cut-off current I
EBO
10 nA V
EB
=6V
Collector-emitter saturation voltage V
CE(SAT)
27
55
115
230
40
80
180
280
mV
mV
mV
mV
I
C
=0.5A, I
B
=20mA*
I
C
=1A, I
B
=20mA*
I
C
=2A, I
B
=20mA*
I
C
=7A, I
B
=350mA*
Base-emitter saturation voltage V
BE(SAT)
1.04 1.15 mV I
C
=7A, I
B
=350mA*
Base-emitter turn-on voltage V
BE(ON)
0.93 1.1 mV I
C
=7A, V
CE
=1V*
Static forward current transfer ratio H
FE
100
100
100
40
190
200
165
90
300
I
C
=10mA, V
CE
=1V*
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=2V*
Transition frequency f
T
100 MHz I
C
=100mA, V
CE
=10V
f=50MHz
Output capacitance C
OBO
75 pF V
CB
=10V, f=1MHz*
Switching times t
ON
t
OFF
45
630
nS
nS
I
C
=1A, V
CC
=10V,
I
B1
=I
B2
=100mA
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ2%.