Diodes ZXTC6718MC - Manual (Page 4)

ZXTC6718MC
Document number: DS31927 Rev. 4 - 2
4 of 9
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTC6718MC
NPN - Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
40 100 - V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 12) BV
CEO
20 27 - V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 8.2 - V I
E
= 100µA
Collector Cutoff Current I
CBO
- - 100 nA V
CB
= 30V
Emitter Cutoff Current I
EBO
- - 100 nA V
EB
= 6V
Collector Emitter Cutoff Current I
CES
- - 100 nA V
CE
= 16V
Static Forward Current Transfer Ratio (Note 12) h
FE
200
300
200
100 400
450
360
180 -
-
-
- -
-
-
- I C = 10mA, V CE = 2V
I
C
= 200mA, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
I
C
= 6A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 12) V CE(sat)
-
8
90
115
190
210
15
150
135
250
300
mV
I
C
= 0.1A, I
B
= 10mA
I
C
= 1A, I
B
= 10mA
I C = 2A, I B = 50mA
I
C
= 3A, I
B
= 100mA
I
C
= 4.5A, I
B
= 125mA
Base-Emitter Turn-On Voltage (Note 12) V
BE(on)
- 0.88 0.97 V I
C
= 4.5A, V
CE
= 2V
Base-Emitter Saturation Voltage (Note 12) V
BE(sat)
- 0.98 1.07 V I
C
= 4.5A, I
B
= 125mA
Output Capacitance C
obo
- 23 30 pF V
CB
= 10V, f = 1MHz
Transition Frequency f
T
100 140 - MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Turn-on Time t
on
- 170 - ns V
CC
= 10V, I
C
= 3A
I
B1
= I
B2
= 10mA Turn-off Time t
off
- 400 - ns
Notes: 12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.